All MOSFET. RTQ020N05TR Datasheet

 

RTQ020N05TR MOSFET. Datasheet pdf. Equivalent


   Type Designator: RTQ020N05TR
   Marking Code: PU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.3 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TSMT6

 RTQ020N05TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RTQ020N05TR Datasheet (PDF)

 ..1. Size:537K  rohm
 rtq020n05tr.pdf

RTQ020N05TR RTQ020N05TR

RTQ020N05 Nch 45V 2A Power MOSFET DatasheetlOutline(6) VDSS45V(5) TSMT6(4) RDS(on) (Max.)190mW(1) ID2A(2) PD1.25W (3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant*1 E

 5.1. Size:217K  rohm
 rtq020n05.pdf

RTQ020N05TR RTQ020N05TR

2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.71) Low On-resistance. (6) (5) (4)2) Space savingsmall surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions ApplicationsAbbreviated symbo

 5.2. Size:1526K  rohm
 rtq020n05hzg.pdf

RTQ020N05TR RTQ020N05TR

RTQ020N05HZGDatasheetNch 45V 2A Small Signal MOSFETlOutlinel SOT-457TVDSS45V SC-95RDS(on)(Max.)190m TSMT6ID2APD1.25W lInner circuitllFeaturesl1) Low on - resistance2) Built-in G-S protection diode3) Small surface mount package(TSMT6)4) Pb-free lead plating ; RoHS compliant5) AEC-Q101 Qualifiedl

 6.1. Size:55K  rohm
 rtq020n03.pdf

RTQ020N05TR RTQ020N05TR

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 6.2. Size:53K  rohm
 rtq020n03tr.pdf

RTQ020N05TR RTQ020N05TR

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark0.160.4Each lead has same dimensions

 6.3. Size:913K  rohm
 rtq020n03fra.pdf

RTQ020N05TR RTQ020N05TR

RTQ020N03RTQ020N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ020N03FRARTQ020N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1(1) (2) (3)3) Low voltage drive (2.5V drive). 1pin mark

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HUF76413P3 | SSI2N60A

 

 
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