All MOSFET. RTQ035N03FRA Datasheet

 

RTQ035N03FRA Datasheet and Replacement


   Type Designator: RTQ035N03FRA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
   Package: TSMT6
 

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RTQ035N03FRA Datasheet (PDF)

 ..1. Size:913K  rohm
 rtq035n03fra.pdf pdf_icon

RTQ035N03FRA

RTQ035N03FRARTQ035N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTQ035N03FRARTQ035N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark

 5.1. Size:53K  rohm
 rtq035n03tr.pdf pdf_icon

RTQ035N03FRA

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions

 5.2. Size:55K  rohm
 rtq035n03.pdf pdf_icon

RTQ035N03FRA

RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.13) Low voltage drive (2.5V drive). (1) (2) (3)1pin mark0.160.4Each lead has same dimensions

 8.1. Size:1036K  rohm
 rtq035p02fha.pdf pdf_icon

RTQ035N03FRA

RTQ035P02FHARTQ035P02TransistorAEC-Q101 Qualified2.5V Drive Pch MOS FET RTQ035P02FHARTQ035P02 External dimensions (Unit : mm) StructureSilicon P-channel MOSFETTSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance.(80m at 2.5V) 2) High Power Package. 0~0.1(1) (2) (3)3) High speed switching. 1pin mark4) Low voltage drive.(2.5

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Datasheet: RTM002P02T2L , RTP315N10F7 , RTQ020N03FRA , RTQ020N03TR , RTQ020N05TR , RTQ025P02FRA , RTQ025P02TR , RTQ030P02TR , AON7506 , RTQ035N03TR , RTQ035P02FHA , RTQ035P02TR , RTQ040P02TR , RTQ045N03FRA , RTQ045N03TR , RTR020N05FRA , RTR020N05TL .

History: H7N0608LD | 2SK4150 | DMN26D0UT | APT18M100B | NCE65NF099LL | CEB3060 | PSMNR70-30YLH

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