RTR025N03FRA Specs and Replacement

Type Designator: RTR025N03FRA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm

Package: TSMT3

RTR025N03FRA substitution

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RTR025N03FRA datasheet

 ..1. Size:913K  rohm
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RTR025N03FRA

RTR025N03FRA RTR025N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR025N03FRA RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead ha... See More ⇒

 5.1. Size:55K  rohm
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RTR025N03FRA

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi... See More ⇒

 5.2. Size:53K  rohm
 rtr025n03tl.pdf pdf_icon

RTR025N03FRA

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi... See More ⇒

 5.3. Size:895K  cn vbsemi
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RTR025N03FRA

RTR025N03TL www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)... See More ⇒

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Detailed specifications: RTQ040P02TR, RTQ045N03FRA, RTQ045N03TR, RTR020N05FRA, RTR020N05TL, RTR020P02, RTR020P02FRA, RTR020P02TL, IRFP250, RTR025N03TL, RTR025N05FRA, RTR025N05TL, RTR025P02, RTR025P02FRA, RTR025P02TL, RTR030N05FRA, RTR030N05TL

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