RVQ040N05TR MOSFET Datasheet: N-Ch, 45V, 4A. Full specification with pinout and replacement list

RVQ040N05TR Specs and Replacement

Type Designator: RVQ040N05TR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TSMT6

RVQ040N05TR substitution

- MOSFET ⓘ Cross-Reference Search

RVQ040N05TR datasheet

..1. Size:604K rohm
rvq040n05tr.pdf pdf_icon

RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 45V (5) (4) RDS(on) (Max.) 53mW (1) ID 4A (2) PD 1.25W (3) lFeatures lInner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant *1 E... See More ⇒

5.1. Size:208K rohm
rvq040n05.pdf pdf_icon

4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbol QG Switching Packaging specif... See More ⇒

Detailed specifications: RTU002P02T106, RV1C001ZP, RV1C002UN, RV2C001ZP, RV2C002UN, RV2C010UN, RV3C001ZP, RV3C002UN, 7N60, RW1C026ZP, RZE002P02TL, RZF020P01TL, RZL025P01TR, RZL035P01TR, RZM001P02, RZQ045P01TR, RZY200P01TL