All MOSFET. RVQ040N05TR Datasheet

 

RVQ040N05TR MOSFET. Datasheet pdf. Equivalent


   Type Designator: RVQ040N05TR
   Marking Code: QG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TSMT6

 RVQ040N05TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RVQ040N05TR Datasheet (PDF)

 ..1. Size:604K  rohm
 rvq040n05tr.pdf

RVQ040N05TR RVQ040N05TR

RVQ040N05 Nch 45V 4A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 45V(5) (4) RDS(on) (Max.)53mW(1) ID4A(2) PD1.25W(3) lFeatures lInner circuit(1) Drain 1) Low on - resistance.(2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant*1 E

 5.1. Size:208K  rohm
 rvq040n05.pdf

RVQ040N05TR RVQ040N05TR

4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space savingsmall surface mount package (TSMT6). 0~0.1 (1) (2) (3)1pin mark0.160.4Each lead has same dimensions Applications Abbreviated symbol : QGSwitching Packaging specif

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STW3N170 | DMP3013SFV-7

 

 
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