RZF020P01TL PDF and Equivalents Search

 

RZF020P01TL Specs and Replacement

Type Designator: RZF020P01TL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TUMT3

RZF020P01TL substitution

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RZF020P01TL datasheet

 ..1. Size:228K  rohm
 rzf020p01tl.pdf pdf_icon

RZF020P01TL

1.5V Drive Pch MOSFET RZF020P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT3). 4) Low voltage drive (1.5V). (1) Gate (2) Source Abbreviated symbol ZE (3) Drain Applications Inner circuit Switching (3) Packaging specifications 2 P... See More ⇒

 5.1. Size:229K  rohm
 rzf020p01.pdf pdf_icon

RZF020P01TL

1.5V Drive Pch MOSFET RZF020P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT3). 4) Low voltage drive (1.5V). (1) Gate (2) Source Abbreviated symbol ZE (3) Drain Applications Inner circuit Switching (3) Packaging specifications 2 P... See More ⇒

Detailed specifications: RV2C001ZP, RV2C002UN, RV2C010UN, RV3C001ZP, RV3C002UN, RVQ040N05TR, RW1C026ZP, RZE002P02TL, IRF830, RZL025P01TR, RZL035P01TR, RZM001P02, RZQ045P01TR, RZY200P01TL, S2N7002DM, SBSS84LT1G, SC3018

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