SCH2825 Specs and Replacement
Type Designator: SCH2825
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SCH6
SCH2825 substitution
- MOSFET ⓘ Cross-Reference Search
SCH2825 datasheet
sch2825.pdf
SCH2825 Ordering number ENA1006A SANYO Semiconductors DATA SHEET MOSFET N-Channel Silicon MOSFET SBD Schottky Barrier Diode SCH2825 General-Purpose Switching Device Applications Features Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance Ultrahi... See More ⇒
Detailed specifications: RZQ045P01TR, RZY200P01TL, S2N7002DM, SBSS84LT1G, SC3018, SCH1301, SCH1302, SCH1345, IRFP064N, SIJ400DP, SIJ420DP, SIJ458DP, SIJ470DP, SIJ478DP, SIJ482DP, SIJ484DP, SIJ800DP
Keywords - SCH2825 MOSFET specs
SCH2825 cross reference
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SCH2825 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK1634 | WMR07N06TS
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