SCH2825 Datasheet and Replacement
Type Designator: SCH2825
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.6 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SCH6
SCH2825 substitution
SCH2825 Datasheet (PDF)
sch2825.pdf

SCH2825Ordering number : ENA1006ASANYO SemiconductorsDATA SHEETMOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeSCH2825General-Purpose Switching DeviceApplicationsFeatures Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance Ultrahi
Datasheet: RZQ045P01TR , RZY200P01TL , S2N7002DM , SBSS84LT1G , SC3018 , SCH1301 , SCH1302 , SCH1345 , 5N50 , SIJ400DP , SIJ420DP , SIJ458DP , SIJ470DP , SIJ478DP , SIJ482DP , SIJ484DP , SIJ800DP .
History: BUK9506-40B | FDS7066N7 | HY2N70T | ME8205B | CHM4426JGP | TPC8080 | LSC65R125HT
Keywords - SCH2825 MOSFET datasheet
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SCH2825 equivalent finder
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History: BUK9506-40B | FDS7066N7 | HY2N70T | ME8205B | CHM4426JGP | TPC8080 | LSC65R125HT



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