All MOSFET. SCH2825 Datasheet

 

SCH2825 Datasheet and Replacement


   Type Designator: SCH2825
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.6 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SCH6
 

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SCH2825 Datasheet (PDF)

 ..1. Size:350K  sanyo
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SCH2825

SCH2825Ordering number : ENA1006ASANYO SemiconductorsDATA SHEETMOSFET : N-Channel Silicon MOSFETSBD : Schottky Barrier DiodeSCH2825General-Purpose Switching DeviceApplicationsFeatures Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting [MOSFET] Low ON-resistance Ultrahi

Datasheet: RZQ045P01TR , RZY200P01TL , S2N7002DM , SBSS84LT1G , SC3018 , SCH1301 , SCH1302 , SCH1345 , 5N50 , SIJ400DP , SIJ420DP , SIJ458DP , SIJ470DP , SIJ478DP , SIJ482DP , SIJ484DP , SIJ800DP .

Keywords - SCH2825 MOSFET datasheet

 SCH2825 cross reference
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