SIJ400DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIJ400DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 26.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 100 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 930 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SO-8L
SIJ400DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIJ400DP Datasheet (PDF)
..1. Size:172K vishay
sij400dp.pdf
sij400dp.pdf
New ProductSiJ400DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.004 at VGS = 10 V 32 TrenchFET Power MOSFET30 45 nC0.005 at VGS = 4.5 V 100 % Rg Tested32 100 % UIS TestedPowerPAK SO-8L Single Compliant to RoHS Directiv
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