SIJ400DP Specs and Replacement
Type Designator: SIJ400DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 26.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 930 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: SO-8L
SIJ400DP substitution
- MOSFET ⓘ Cross-Reference Search
SIJ400DP datasheet
sij400dp.pdf
New Product SiJ400DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.004 at VGS = 10 V 32 TrenchFET Power MOSFET 30 45 nC 0.005 at VGS = 4.5 V 100 % Rg Tested 32 100 % UIS Tested PowerPAK SO-8L Single Compliant to RoHS Directiv... See More ⇒
Detailed specifications: RZY200P01TL, S2N7002DM, SBSS84LT1G, SC3018, SCH1301, SCH1302, SCH1345, SCH2825, AO4468, SIJ420DP, SIJ458DP, SIJ470DP, SIJ478DP, SIJ482DP, SIJ484DP, SIJ800DP, SIR158DP
Keywords - SIJ400DP MOSFET specs
SIJ400DP cross reference
SIJ400DP equivalent finder
SIJ400DP pdf lookup
SIJ400DP substitution
SIJ400DP replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK1634 | WMR07N06TS
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
bu406 | j201 datasheet | 2n5088 datasheet | irfp064n | tip31 transistor | 2sc1384 | mj21196g | irfb4115