SIJ478DP Specs and Replacement
Type Designator: SIJ478DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 950 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: SO-8L
SIJ478DP substitution
- MOSFET ⓘ Cross-Reference Search
SIJ478DP datasheet
sij478dp.pdf
SiJ478DP www.vishay.com Vishay Siliconix N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0080 at VGS = 10 V 60a Material categorization 80 0.0088 at VGS = 6.0 V 60a 17.1 nC For definitions of compliance please see 0.0115 at VGS = 4.5 V 54 www.vishay.com/doc?99912 ... See More ⇒
sij470dp.pdf
SiJ470DP www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET Technology Optimizes Balance VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) of RDS(on), Qg, Qsw and Qoss 0.0091 at VGS = 10 V 58.8 100 % Rg and UIS Tested 100 28.5 nC 0.0100 at VGS = 7.5 V 54.6 Material categorization For definitions of compliance please see ... See More ⇒
Detailed specifications: SCH1301, SCH1302, SCH1345, SCH2825, SIJ400DP, SIJ420DP, SIJ458DP, SIJ470DP, IRF740, SIJ482DP, SIJ484DP, SIJ800DP, SIR158DP, SIR166DP, SIR168DP, SIR172ADP, SIR172DP
Keywords - SIJ478DP MOSFET specs
SIJ478DP cross reference
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SIJ478DP substitution
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