SIJ478DP Datasheet and Replacement
Type Designator: SIJ478DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: SO-8L
SIJ478DP substitution
SIJ478DP Datasheet (PDF)
sij478dp.pdf

SiJ478DPwww.vishay.comVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0080 at VGS = 10 V 60a Material categorization: 80 0.0088 at VGS = 6.0 V 60a 17.1 nCFor definitions of compliance please see 0.0115 at VGS = 4.5 V 54www.vishay.com/doc?99912
sij470dp.pdf

SiJ470DPwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET Technology Optimizes Balance VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)of RDS(on), Qg, Qsw and Qoss0.0091 at VGS = 10 V 58.8 100 % Rg and UIS Tested100 28.5 nC0.0100 at VGS = 7.5 V 54.6 Material categorization: For definitions of compliance please see
Datasheet: SCH1301 , SCH1302 , SCH1345 , SCH2825 , SIJ400DP , SIJ420DP , SIJ458DP , SIJ470DP , IRF740 , SIJ482DP , SIJ484DP , SIJ800DP , SIR158DP , SIR166DP , SIR168DP , SIR172ADP , SIR172DP .
History: PNM523T703E0-2 | 2SK4067I | 2SK3434 | STW56N65M2-4 | UT3409 | BLP032N08-T | 3SK249
Keywords - SIJ478DP MOSFET datasheet
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History: PNM523T703E0-2 | 2SK4067I | 2SK3434 | STW56N65M2-4 | UT3409 | BLP032N08-T | 3SK249



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