SIR172DP MOSFET Datasheet: N-Ch, 30V, 16.1A. Full specification with pinout and replacement list

SIR172DP Specs and Replacement

Type Designator: SIR172DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm

Package: SO-8

SIR172DP substitution

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SIR172DP datasheet

..1. Size:488K vishay
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SiR172DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET 0.0089 at VGS = 10 V 20 Low Thermal Resistance PowerPAK Package 30 9.8 nC 0.0124 at VGS = 4.5 V 20 with Low 1.07 mm Profile Optimized for High-Side Synchr... See More ⇒

8.1. Size:494K vishay
sir172adp.pdf pdf_icon

SiR172ADP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a, g Qg (Typ.) Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 0.0085 at VGS = 10 V 24 30 12.8 nC Optimized for High-Side Synchronous Rectifier 0.0105 at VGS = 4.5 V 24 Operation 100 % Rg and UIS Tes... See More ⇒

Detailed specifications: SIJ478DP, SIJ482DP, SIJ484DP, SIJ800DP, SIR158DP, SIR166DP, SIR168DP, SIR172ADP, IRF640, SIR316DP, SIR330DP, SIR401DP, SIR402DP, SIR403EDP, SIR404DP, SIR406DP, SIR408DP