All MOSFET. SIR172DP Datasheet

 

SIR172DP Datasheet and Replacement


   Type Designator: SIR172DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: SO-8
 

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SIR172DP Datasheet (PDF)

 ..1. Size:488K  vishay
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SIR172DP

SiR172DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET0.0089 at VGS = 10 V 20 Low Thermal Resistance PowerPAK Package 30 9.8 nC0.0124 at VGS = 4.5 V 20with Low 1.07 mm Profile Optimized for High-Side Synchr

 8.1. Size:494K  vishay
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SIR172DP

SiR172ADPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a, g Qg (Typ.) Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile0.0085 at VGS = 10 V 2430 12.8 nC Optimized for High-Side Synchronous Rectifier 0.0105 at VGS = 4.5 V 24Operation 100 % Rg and UIS Tes

Datasheet: SIJ478DP , SIJ482DP , SIJ484DP , SIJ800DP , SIR158DP , SIR166DP , SIR168DP , SIR172ADP , IRFP460 , SIR316DP , SIR330DP , SIR401DP , SIR402DP , SIR403EDP , SIR404DP , SIR406DP , SIR408DP .

History: AOSP32368 | IPW60R125CP | 2SK3479-Z | BLL1214-250R

Keywords - SIR172DP MOSFET datasheet

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