All MOSFET. SIR403EDP Datasheet

 

SIR403EDP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR403EDP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 21.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 102 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: SO-8

 SIR403EDP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR403EDP Datasheet (PDF)

 ..1. Size:358K  vishay
 sir403edp.pdf

SIR403EDP SIR403EDP

New ProductSiR403EDPVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchapplicationsVDS (V) RDS(on) () Max.IDa, e Qg (Typ.) Extremely low RDS(on)0.0065 at VGS = - 10 V - 40 TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0082 at VGS = - 6 V - 40 66 nC- 30 Typical ESD Performan

 9.1. Size:518K  vishay
 sir401dp.pdf

SIR403EDP SIR403EDP

New ProductSiR401DPVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested- 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC0.0077 at VGS = -

 9.2. Size:86K  vishay
 sir408dp.pdf

SIR403EDP SIR403EDP

SiR408DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0063 at VGS = 10 V TrenchFET Power MOSFET50a25 9.3 nC 100 % Rg Tested0.008 at VGS = 4.5 V 50a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIO

 9.3. Size:321K  vishay
 sir402dp.pdf

SIR403EDP SIR403EDP

SiR402DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET3530 12 nC 100 % Rg Tested0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONSS

 9.4. Size:337K  vishay
 sir404dp.pdf

SIR403EDP SIR403EDP

New ProductSiR404DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.00160 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET0.00175 at VGS = 4.5 V 20 60 64.5 nC 100 % Rg Tested0.00225 at VGS = 2.5 V 60 100 % UIS Tested 2.5 V and 3.

 9.5. Size:339K  vishay
 sir406dp.pdf

SIR403EDP SIR403EDP

New ProductSiR406DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.0038 at VGS = 10 V 40g TrenchFET Gen III Power MOSFET25 15.8 nC0.0048 at VGS = 4.5 V 100 % Rg Tested40g 100 % Avalanche Tested Compliant to RoHS Directive 2002/9

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SJ198

 

 
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