SIR403EDP - аналоги, даташиты, параметры транзистора

SIR403EDP Datasheet (PDF)

..1. Size:358K vishay
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New ProductSiR403EDPVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchapplicationsVDS (V) RDS(on) () Max.IDa, e Qg (Typ.) Extremely low RDS(on)0.0065 at VGS = - 10 V - 40 TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0082 at VGS = - 6 V - 40 66 nC- 30 Typical ESD Performan

9.1. Size:518K vishay
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New ProductSiR401DPVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested- 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC0.0077 at VGS = -

9.2. Size:86K vishay
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SiR408DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0063 at VGS = 10 V TrenchFET Power MOSFET50a25 9.3 nC 100 % Rg Tested0.008 at VGS = 4.5 V 50a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIO

9.3. Size:321K vishay
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SiR402DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET3530 12 nC 100 % Rg Tested0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONSS