All MOSFET. SIR408DP Datasheet

 

SIR408DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIR408DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 21.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21.5 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: SO-8

 SIR408DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIR408DP Datasheet (PDF)

 ..1. Size:86K  vishay
 sir408dp.pdf

SIR408DP SIR408DP

SiR408DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0063 at VGS = 10 V TrenchFET Power MOSFET50a25 9.3 nC 100 % Rg Tested0.008 at VGS = 4.5 V 50a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIO

 9.1. Size:518K  vishay
 sir401dp.pdf

SIR408DP SIR408DP

New ProductSiR401DPVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 DefinitionVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = - 10 V - 50 100% Rg and UIS Tested- 20 0.0042 at VGS = - 4.5 V - 50 97 nC Compliant to RoHS Directive 2002/95/EC0.0077 at VGS = -

 9.2. Size:321K  vishay
 sir402dp.pdf

SIR408DP SIR408DP

SiR402DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET3530 12 nC 100 % Rg Tested0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONSS

 9.3. Size:337K  vishay
 sir404dp.pdf

SIR408DP SIR408DP

New ProductSiR404DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.00160 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET0.00175 at VGS = 4.5 V 20 60 64.5 nC 100 % Rg Tested0.00225 at VGS = 2.5 V 60 100 % UIS Tested 2.5 V and 3.

 9.4. Size:339K  vishay
 sir406dp.pdf

SIR408DP SIR408DP

New ProductSiR406DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.0038 at VGS = 10 V 40g TrenchFET Gen III Power MOSFET25 15.8 nC0.0048 at VGS = 4.5 V 100 % Rg Tested40g 100 % Avalanche Tested Compliant to RoHS Directive 2002/9

 9.5. Size:358K  vishay
 sir403edp.pdf

SIR408DP SIR408DP

New ProductSiR403EDPVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchapplicationsVDS (V) RDS(on) () Max.IDa, e Qg (Typ.) Extremely low RDS(on)0.0065 at VGS = - 10 V - 40 TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0082 at VGS = - 6 V - 40 66 nC- 30 Typical ESD Performan

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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