SIR426DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR426DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 4.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20.5 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 185 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: SO-8
SIR426DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR426DP Datasheet (PDF)
sir426dp.pdf
SiR426DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0105 at VGS = 10 V Material categorization:30a40 9.3 nCFor definitions of compliance please see0.0125 at VGS = 4.5 V 30awww.vishay.com/doc?99912PowerPAK SO-8APPLICATIONSD DC/DC C
sir422dp.pdf
SiR422DPVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0066 at VGS = 10 V TrenchFET Power MOSFET4040 16.1 nC 100 % Rg Tested0.008 at VGS = 4.5 V 40 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATION
sir424dp.pdf
SiR424DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0055 at VGS = 10 V 30a TrenchFET Power MOSFET20 9.6 nC 100 % Rg Tested0.0074 at VGS = 4.5 V 30a 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8APPLICATIONS
sir428dp.pdf
New ProductSiR428DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0075 at VGS = 10 V 30g TrenchFET Power MOSFET30 9.5 nC0.0095 at VGS = 4.5 V 100 % Rg Tested30g 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK
sir422dp.pdf
SMD Type MOSFETN-Channel MOSFETSIR422DP (KIR422DP) SO-8 (DFN5X6)PowerPAK Features VDS (V) = 40V ID = 40 A (VGS = 10V)S6.15 mm 5.15 mm1S RDS(ON) 7.5 m (VGS = 10V)2S3G RDS(ON) 9 m (VGS = 4.5V)D4D8D7D6D5GBottom ViewS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt
sir422dp-t1-ge3.pdf
SIR422DP-T1-GE3www.VBsemi.twN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
