SIR432DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR432DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 115 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0306 Ohm
Package: SO-8
SIR432DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR432DP Datasheet (PDF)
sir432dp.pdf
SiR432DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.0306 at VGS = 10 V 28.4100 15.5 nC 100 % Rg Tested0.0327 at VGS = 7.5 V 27.5 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8AP
sir436dp.pdf
SiR436DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0046 at VGS = 10 V 40 100 % Rg Tested25 13 nC 100 % UIS Tested0.0062 at VGS = 4.5 V 40APPLICATIONSPowerPAK SO-8 Low-Side Switch Server, VRMS6.15 mm 5.15 mmD1S2S3G4
sir438dp.pdf
New ProductSiR438DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET0.0018 at VGS = 10 V 60 100 % Rg Tested25 32.6 nC0.0023 at VGS = 4.5 V 60 100 % Avalanche TestedPowerPAK SO-8APPLICATIONS Server- Low S
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
