SIR436DP Specs and Replacement
Type Designator: SIR436DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 425 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
Package: SO-8
SIR436DP substitution
- MOSFET ⓘ Cross-Reference Search
SIR436DP datasheet
sir436dp.pdf
SiR436DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0046 at VGS = 10 V 40 100 % Rg Tested 25 13 nC 100 % UIS Tested 0.0062 at VGS = 4.5 V 40 APPLICATIONS PowerPAK SO-8 Low-Side Switch Server, VRM S 6.15 mm 5.15 mm D 1 S 2 S 3 G 4... See More ⇒
sir432dp.pdf
SiR432DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.0306 at VGS = 10 V 28.4 100 15.5 nC 100 % Rg Tested 0.0327 at VGS = 7.5 V 27.5 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 AP... See More ⇒
sir438dp.pdf
New Product SiR438DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) TrenchFET Gen III Power MOSFET 0.0018 at VGS = 10 V 60 100 % Rg Tested 25 32.6 nC 0.0023 at VGS = 4.5 V 60 100 % Avalanche Tested PowerPAK SO-8 APPLICATIONS Server - Low S... See More ⇒
Detailed specifications: SIR412DP, SIR414DP, SIR416DP, SIR418DP, SIR424DP, SIR426DP, SIR428DP, SIR432DP, IRF9540, SIR438DP, SIR440DP, SIR460DP, SIR462DP, SIR464DP, SIR466DP, SIR468DP, SIR470DP
Keywords - SIR436DP MOSFET specs
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