PN4416 Specs and Replacement
Type Designator: PN4416
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.015 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 0.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
Package: TO92
PN4416 substitution
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PN4416 datasheet
pn4416 pn4416a cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PN4416; PN4416A N-channel field-effect transistor December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistor PN4416; PN4416A FEATURES QUICK REFERENCE DATA Low noise SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Interchangeability of drain and VDS... See More ⇒
2n4416-a pn4416.pdf
N-Channel JFET High Frequency Amplifier CORPORATION 2N4416 / 2N4416A / PN4416 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . . ... See More ⇒
spn4412ws8rg.pdf
SPN4412WS8RG www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒
Detailed specifications: PMBFJ211, PMBFJ212, PMBFJ308, PMBFJ309, PMBFJ310, PN4391, PN4392, PN4393, 13N50, PN4416A, PSMN003-25W, RF1K49086, RF1K49088, RF1K49090, RF1K49092, RF1K49093, RF1K49154
Keywords - PN4416 MOSFET specs
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