PN4416 MOSFET. Datasheet pdf. Equivalent
Type Designator: PN4416
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.015 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
Package: TO92
PN4416 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PN4416 Datasheet (PDF)
pn4416 pn4416a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPN4416; PN4416AN-channel field-effect transistorDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistor PN4416; PN4416AFEATURES QUICK REFERENCE DATA Low noiseSYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Interchangeability of drain andVDS
2n4416-a pn4416.pdf
N-Channel JFETHigh Frequency AmplifierCORPORATION2N4416 / 2N4416A / PN4416FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . .
spn4412ws8rg.pdf
SPN4412WS8RGwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
Datasheet: PMBFJ211 , PMBFJ212 , PMBFJ308 , PMBFJ309 , PMBFJ310 , PN4391 , PN4392 , PN4393 , AON7408 , PN4416A , PSMN003-25W , RF1K49086 , RF1K49088 , RF1K49090 , RF1K49092 , RF1K49093 , RF1K49154 .
