PN4416
MOSFET. Datasheet pdf. Equivalent
Type Designator: PN4416
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 0.015
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 0.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 150
Ohm
Package:
TO92
PN4416
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PN4416
Datasheet (PDF)
..1. Size:70K philips
pn4416 pn4416a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPN4416; PN4416AN-channel field-effect transistorDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistor PN4416; PN4416AFEATURES QUICK REFERENCE DATA Low noiseSYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Interchangeability of drain andVDS
..2. Size:23K calogic
2n4416-a pn4416.pdf
N-Channel JFETHigh Frequency AmplifierCORPORATION2N4416 / 2N4416A / PN4416FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low Noise Low Feedback Capacitance Gate-Source or Gate-Drain Voltage Low Output Capacitance 2N4416, PN4416 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V High Transconductance 2N4416A . . . .
9.1. Size:1433K cn vbsemi
spn4412ws8rg.pdf
SPN4412WS8RGwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
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