SIR492DP Datasheet and Replacement
Type Designator: SIR492DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 1290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: SO-8
SIR492DP substitution
SIR492DP Datasheet (PDF)
sir492dp.pdf
New ProductSiR492DPVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)e Qg (Typ.) TrenchFET Power MOSFETRoHS0.0038 at VGS = 4.5 V 40COMPLIANT 12 41 nC Low Thermal Resistance PowerPAK 0.0047 at VGS = 2.5 V 40Package with Small Size and Low 1.07 mm Profile 100 % Rg TestedAPPLICATIONS
sir496dp.pdf
SiR496DPVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition0.0045 at VGS = 10 V 35g TrenchFET Power MOSFET20 13.2 nC0.0058 at VGS = 4.5 V 35g 100 % Rg Tested 100 % Avalanche TestedPowerPAK SO-8 Compliant to RoHS Directive 2002/95/
sir494dp.pdf
New ProductSiR494DPVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0012 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET12 50 nC0.0017 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPower
Datasheet: SIR466DP , SIR468DP , SIR470DP , SIR472ADP , SIR472DP , SIR474DP , SIR476DP , SIR484DP , K4145 , SIR494DP , SIR496DP , SIR640ADP , SIR640DP , SIR642DP , SIR662DP , SIR698DP , SIR770DP .
Keywords - SIR492DP MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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