SIR492DP Specs and Replacement
Type Designator: SIR492DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 1290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: SO-8
SIR492DP substitution
- MOSFET ⓘ Cross-Reference Search
SIR492DP datasheet
sir492dp.pdf
New Product SiR492DP Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0038 at VGS = 4.5 V 40 COMPLIANT 12 41 nC Low Thermal Resistance PowerPAK 0.0047 at VGS = 2.5 V 40 Package with Small Size and Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS ... See More ⇒
sir496dp.pdf
SiR496DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0045 at VGS = 10 V 35g TrenchFET Power MOSFET 20 13.2 nC 0.0058 at VGS = 4.5 V 35g 100 % Rg Tested 100 % Avalanche Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/... See More ⇒
sir494dp.pdf
New Product SiR494DP Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0012 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET 12 50 nC 0.0017 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC Power... See More ⇒
Detailed specifications: SIR466DP, SIR468DP, SIR470DP, SIR472ADP, SIR472DP, SIR474DP, SIR476DP, SIR484DP, K4145, SIR494DP, SIR496DP, SIR640ADP, SIR640DP, SIR642DP, SIR662DP, SIR698DP, SIR770DP
Keywords - SIR492DP MOSFET specs
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