SIR496DP Specs and Replacement
Type Designator: SIR496DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 555 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: SO-8
SIR496DP substitution
- MOSFET ⓘ Cross-Reference Search
SIR496DP datasheet
sir496dp.pdf
SiR496DP Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.0045 at VGS = 10 V 35g TrenchFET Power MOSFET 20 13.2 nC 0.0058 at VGS = 4.5 V 35g 100 % Rg Tested 100 % Avalanche Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/... See More ⇒
sir492dp.pdf
New Product SiR492DP Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0038 at VGS = 4.5 V 40 COMPLIANT 12 41 nC Low Thermal Resistance PowerPAK 0.0047 at VGS = 2.5 V 40 Package with Small Size and Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS ... See More ⇒
sir494dp.pdf
New Product SiR494DP Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0012 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET 12 50 nC 0.0017 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC Power... See More ⇒
Detailed specifications: SIR470DP, SIR472ADP, SIR472DP, SIR474DP, SIR476DP, SIR484DP, SIR492DP, SIR494DP, AON7410, SIR640ADP, SIR640DP, SIR642DP, SIR662DP, SIR698DP, SIR770DP, SIR774DP, SIR788DP
Keywords - SIR496DP MOSFET specs
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