SIR640DP Datasheet and Replacement
Type Designator: SIR640DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 75 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 3810 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: SO-8
SIR640DP substitution
SIR640DP Datasheet (PDF)
sir640dp.pdf

New ProductSiR640DPVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0017 at VGS = 10 V 60 TrenchFET Power MOSFET40 34.6 nC0.0022 at VGS = 4.5 V 60 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8 Low Qg for High Efficiency Compli
sir640adp.pdf

SiR640ADPwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) Low Qg for high efficiency0.0020 at VGS = 10 V 10040 28.5 nC 100 % Rg and UIS tested0.0025 at VGS = 4.5 V 100 Material categorization: PowerPAK SO-8 Singlefor definitions of compliance please se
sir642dp.pdf

New ProductSiR642DPVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) Low Qg for High Efficiency0.0024 at VGS = 10 V 60 100 % Rg and UIS Tested40 27.2 nC0.0030 at VGS = 4.5 V 60 Material categorization:For definitions of compliance please see www.vishay.com/doc?99912
Datasheet: SIR472DP , SIR474DP , SIR476DP , SIR484DP , SIR492DP , SIR494DP , SIR496DP , SIR640ADP , 4435 , SIR642DP , SIR662DP , SIR698DP , SIR770DP , SIR774DP , SIR788DP , SIR798DP , SIR800DP .
History: SIR640ADP
Keywords - SIR640DP MOSFET datasheet
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SIR640DP substitution
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History: SIR640ADP



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