SIR770DP Specs and Replacement

Type Designator: SIR770DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: SO-8

SIR770DP substitution

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SIR770DP datasheet

 ..1. Size:510K  vishay
 sir770dp.pdf pdf_icon

SIR770DP

SiR770DP Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS RDS(on) ( ) ID (A)a, f Qg (Typ.) Definition 0.021 at VGS = 10 V 8.0 Channel-1 30 6.6 TrenchFET Power MOSFET 0.025 at VGS = 4.5 V 8.0 100 % Rg and UIS Tested 0.021 at VGS = 10 V 8.0 Channel-2 30 6.6 Compliant ... See More ⇒

 9.1. Size:182K  vishay
 sir774dp.pdf pdf_icon

SIR770DP

New Product SiR774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) SkyFET Monolithic TrenchFET 0.0026 at VGS = 10 V 40 Power MOSFET and Schottky Diode 30 28.5 nC 0.0034 at VGS = 4.5 V 40 100 % Rg and UIS Tested ... See More ⇒

Detailed specifications: SIR492DP, SIR494DP, SIR496DP, SIR640ADP, SIR640DP, SIR642DP, SIR662DP, SIR698DP, IRF530, SIR774DP, SIR788DP, SIR798DP, SIR800DP, SIR802DP, SIR804DP, SIR808DP, SIR812DP

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