SIR826DP MOSFET. Datasheet pdf. Equivalent
Type Designator: SIR826DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1870 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: SO-8
SIR826DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIR826DP Datasheet (PDF)
sir826dp.pdf
New ProductSiR826DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0048 at VGS = 10 V 60 TrenchFET Power MOSFET0.0052 at VGS = 7.5 V 80 60 27.9 nC 100 % Rg Tested0.0065 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Dire
sir826adp.pdf
New ProductSiR826ADPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V Material categorization:60For definitions of compliance please see0.0059 at VGS = 7.5 V 80 60 25 nCwww.vishay.com/doc?999120.0087 at VGS = 4.5 V 60AP
sir820dp.pdf
New ProductSiR820DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.0030 at VGS = 10 V 40g30 28.6 nC 100 % Rg and UIS Tested0.0038 at VGS = 4.5 V 40g Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SO-8
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
