All MOSFET. SIR826DP Datasheet

 

SIR826DP Datasheet and Replacement


   Type Designator: SIR826DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: SO-8
 

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SIR826DP Datasheet (PDF)

 ..1. Size:504K  vishay
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SIR826DP

New ProductSiR826DPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0048 at VGS = 10 V 60 TrenchFET Power MOSFET0.0052 at VGS = 7.5 V 80 60 27.9 nC 100 % Rg Tested0.0065 at VGS = 4.5 V 60 100 % UIS Tested Compliant to RoHS Dire

 8.1. Size:507K  vishay
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SIR826DP

New ProductSiR826ADPVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V Material categorization:60For definitions of compliance please see0.0059 at VGS = 7.5 V 80 60 25 nCwww.vishay.com/doc?999120.0087 at VGS = 4.5 V 60AP

 9.1. Size:478K  vishay
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SIR826DP

New ProductSiR820DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.0030 at VGS = 10 V 40g30 28.6 nC 100 % Rg and UIS Tested0.0038 at VGS = 4.5 V 40g Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SO-8

Datasheet: SIR800DP , SIR802DP , SIR804DP , SIR808DP , SIR812DP , SIR818DP , SIR820DP , SIR826ADP , 5N65 , SIR836DP , SIR838DP , SIR844DP , SIR846ADP , SIR846DP , SIR850DP , SIR862DP , SIR864DP .

History: SSM90T03GJ | HPW080NE5SPA | NP90N04VDG | KSK596 | SFF80N20M | WTM3401 | AON6790

Keywords - SIR826DP MOSFET datasheet

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