SIR844DP Datasheet and Replacement
Type Designator: SIR844DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: SO-8
SIR844DP substitution
SIR844DP Datasheet (PDF)
sir844dp.pdf

New ProductSiR844DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0028 at VGS = 10 V 50a, g TrenchFET Power MOSFET25 29.5 nC0.0038 at VGS = 4.5 V New MOSFET Technology Optimized for 50a, gRinging Reduction in Switching ApplicationsPowerPAK
sir846adp.pdf

SiR846ADPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0078 at VGS = 10 V 60 Material categorization:0.0085 at VGS = 7.5 V For definitions of compliance please see100 60 26.7 nCwww.vishay.com/doc?999120.0095 at VGS = 6 V 60APPLICATIONS
sir846dp.pdf

New ProductSiR846DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.0078 at VGS = 10 V 60 TrenchFET Power MOSFET100 35.7 nC0.0085 at VGS = 7.5 V 60 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK
Datasheet: SIR808DP , SIR812DP , SIR818DP , SIR820DP , SIR826ADP , SIR826DP , SIR836DP , SIR838DP , SKD502T , SIR846ADP , SIR846DP , SIR850DP , SIR862DP , SIR864DP , SIR866DP , SIR870ADP , SIR870DP .
History: IRF7751GTR | WTK9435
Keywords - SIR844DP MOSFET datasheet
SIR844DP cross reference
SIR844DP equivalent finder
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History: IRF7751GTR | WTK9435



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