SIR844DP Specs and Replacement
Type Designator: SIR844DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: SO-8
SIR844DP substitution
- MOSFET ⓘ Cross-Reference Search
SIR844DP datasheet
sir844dp.pdf
New Product SiR844DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0028 at VGS = 10 V 50a, g TrenchFET Power MOSFET 25 29.5 nC 0.0038 at VGS = 4.5 V New MOSFET Technology Optimized for 50a, g Ringing Reduction in Switching Applications PowerPAK... See More ⇒
sir846adp.pdf
SiR846ADP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0078 at VGS = 10 V 60 Material categorization 0.0085 at VGS = 7.5 V For definitions of compliance please see 100 60 26.7 nC www.vishay.com/doc?99912 0.0095 at VGS = 6 V 60 APPLICATIONS... See More ⇒
sir846dp.pdf
New Product SiR846DP Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0078 at VGS = 10 V 60 TrenchFET Power MOSFET 100 35.7 nC 0.0085 at VGS = 7.5 V 60 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK... See More ⇒
Detailed specifications: SIR808DP, SIR812DP, SIR818DP, SIR820DP, SIR826ADP, SIR826DP, SIR836DP, SIR838DP, RFP50N06, SIR846ADP, SIR846DP, SIR850DP, SIR862DP, SIR864DP, SIR866DP, SIR870ADP, SIR870DP
Keywords - SIR844DP MOSFET specs
SIR844DP cross reference
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SIR844DP substitution
SIR844DP replacement
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