SIR864DP Specs and Replacement

Type Designator: SIR864DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: SO-8

SIR864DP substitution

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SIR864DP datasheet

 ..1. Size:477K  vishay
 sir864dp.pdf pdf_icon

SIR864DP

New Product SiR864DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0036 at VGS = 10 V 40g TrenchFET Power MOSFET 30 20 nC 0.0045 at VGS = 4.5 V 40g 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/EC A... See More ⇒

 9.1. Size:477K  vishay
 sir866dp.pdf pdf_icon

SIR864DP

SiR866DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFET RoHS 0.0019 at VGS = 10 V 60g Low RDS(on) COMPLIANT 20 35.3 nC 0.00255 at VGS = 4.5 V PWM (Qgd and Rg) Optimized 60g 100 % Rg Tested 100 % UIS Tested PowerPAK SO-8 APPLICATIONS ... See More ⇒

 9.2. Size:324K  vishay
 sir862dp.pdf pdf_icon

SIR864DP

New Product SiR862DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition TrenchFET Power MOSFET 0.0028 at VGS = 10 V 50 25 28.4 nC 100 % Rg and UIS Tested 0.0035 at VGS = 4.5 V 50 Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICAT... See More ⇒

Detailed specifications: SIR826DP, SIR836DP, SIR838DP, SIR844DP, SIR846ADP, SIR846DP, SIR850DP, SIR862DP, IRF520, SIR866DP, SIR870ADP, SIR870DP, SIR872ADP, SIR872DP, SIR874DP, SIR876ADP, SIR876DP

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