SIR864DP Datasheet and Replacement
Type Designator: SIR864DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: SO-8
SIR864DP substitution
SIR864DP Datasheet (PDF)
sir864dp.pdf
New ProductSiR864DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0036 at VGS = 10 V 40g TrenchFET Power MOSFET30 20 nC0.0045 at VGS = 4.5 V 40g 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8 Compliant to RoHS Directive 2002/95/ECA
sir866dp.pdf
SiR866DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Gen III Power MOSFETRoHS0.0019 at VGS = 10 V 60g Low RDS(on)COMPLIANT 20 35.3 nC0.00255 at VGS = 4.5 V PWM (Qgd and Rg) Optimized60g 100 % Rg Tested 100 % UIS TestedPowerPAK SO-8APPLICATIONS
sir862dp.pdf
New ProductSiR862DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) Definition TrenchFET Power MOSFET 0.0028 at VGS = 10 V 5025 28.4 nC 100 % Rg and UIS Tested0.0035 at VGS = 4.5 V 50 Compliant to RoHS Directive 2002/95/ECPowerPAK SO-8 APPLICAT
Datasheet: SIR826DP , SIR836DP , SIR838DP , SIR844DP , SIR846ADP , SIR846DP , SIR850DP , SIR862DP , IRF520 , SIR866DP , SIR870ADP , SIR870DP , SIR872ADP , SIR872DP , SIR874DP , SIR876ADP , SIR876DP .
Keywords - SIR864DP MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: ST2302 | SIR838DP
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