All MOSFET. SIR890DP Datasheet

 

SIR890DP Datasheet and Replacement


   Type Designator: SIR890DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 42 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: SO-8
 
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SIR890DP Datasheet (PDF)

 ..1. Size:508K  vishay
 sir890dp.pdf pdf_icon

SIR890DP

New ProductSiR890DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0029 at VGS = 10 V 50g 100 % Rg Tested20 20 nC0.0040 at VGS = 4.5 V 50g 100 % UIS TestedPowerPAK SO-8APPLICATIONS Low-Side MOSFET in Synchronous Buck

 9.1. Size:508K  vishay
 sir892dp.pdf pdf_icon

SIR890DP

New ProductSiR892DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = 10 V 50a, g 100 % Rg Tested25 20 nC0.0042 at VGS = 4.5 V 50a, g 100 % UIS TestedPowerPAK SO-8 APPLICATIONS Low-Side MOSFET in Synchronous

Datasheet: SIR876DP , SIR878ADP , SIR878DP , SIR880ADP , SIR880DP , SIR882ADP , SIR882DP , SIR888DP , 60N06 , SIR892DP , SIRA00DP , SIRA02DP , SIRA04DP , SIRA06DP , SIRA10DP , SIRA12DP , SIRA14DP .

History: JMPC18N20BJ

Keywords - SIR890DP MOSFET datasheet

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