SIR890DP Specs and Replacement

Type Designator: SIR890DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: SO-8

SIR890DP substitution

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SIR890DP datasheet

 ..1. Size:508K  vishay
 sir890dp.pdf pdf_icon

SIR890DP

New Product SiR890DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0029 at VGS = 10 V 50g 100 % Rg Tested 20 20 nC 0.0040 at VGS = 4.5 V 50g 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Low-Side MOSFET in Synchronous Buck... See More ⇒

 9.1. Size:508K  vishay
 sir892dp.pdf pdf_icon

SIR890DP

New Product SiR892DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0032 at VGS = 10 V 50a, g 100 % Rg Tested 25 20 nC 0.0042 at VGS = 4.5 V 50a, g 100 % UIS Tested PowerPAK SO-8 APPLICATIONS Low-Side MOSFET in Synchronous... See More ⇒

Detailed specifications: SIR876DP, SIR878ADP, SIR878DP, SIR880ADP, SIR880DP, SIR882ADP, SIR882DP, SIR888DP, IRLB3034, SIR892DP, SIRA00DP, SIRA02DP, SIRA04DP, SIRA06DP, SIRA10DP, SIRA12DP, SIRA14DP

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