SIR890DP Datasheet and Replacement
Type Designator: SIR890DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 810 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: SO-8
SIR890DP substitution
SIR890DP Datasheet (PDF)
sir890dp.pdf

New ProductSiR890DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0029 at VGS = 10 V 50g 100 % Rg Tested20 20 nC0.0040 at VGS = 4.5 V 50g 100 % UIS TestedPowerPAK SO-8APPLICATIONS Low-Side MOSFET in Synchronous Buck
sir892dp.pdf

New ProductSiR892DPVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0032 at VGS = 10 V 50a, g 100 % Rg Tested25 20 nC0.0042 at VGS = 4.5 V 50a, g 100 % UIS TestedPowerPAK SO-8 APPLICATIONS Low-Side MOSFET in Synchronous
Datasheet: SIR876DP , SIR878ADP , SIR878DP , SIR880ADP , SIR880DP , SIR882ADP , SIR882DP , SIR888DP , 60N06 , SIR892DP , SIRA00DP , SIRA02DP , SIRA04DP , SIRA06DP , SIRA10DP , SIRA12DP , SIRA14DP .
History: AS3019E | BSN304 | STD3NK60Z | STU60N3LH5-S | SI2321DS | WMM340N20HG2 | AOC2804
Keywords - SIR890DP MOSFET datasheet
SIR890DP cross reference
SIR890DP equivalent finder
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History: AS3019E | BSN304 | STD3NK60Z | STU60N3LH5-S | SI2321DS | WMM340N20HG2 | AOC2804



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