All MOSFET. SIRA10DP Datasheet

 

SIRA10DP Datasheet and Replacement


   Type Designator: SIRA10DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: SO-8
 

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SIRA10DP Datasheet (PDF)

 ..1. Size:203K  vishay
 sira10dp.pdf pdf_icon

SIRA10DP

New ProductSiRA10DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0037 at VGS = 10 V 30g Material categorization:30 15.4 nCFor definitions of compliance please see0.0050 at VGS = 4.5 V 30gwww.vishay.com/doc?99912APPLICATIONS

 8.1. Size:418K  vishay
 sira10bdp.pdf pdf_icon

SIRA10DP

SiRA10BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SAPPLICATIONSD3 S4 S1 High power density DC/DCGTop View Bottom View Syn

 9.1. Size:240K  vishay
 sira14bdp.pdf pdf_icon

SIRA10DP

SiRA14BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SDAPPLICATIONS3 S4 S1 High power density DC/DCGTop View Bottom View Syn

 9.2. Size:507K  vishay
 sira14dp.pdf pdf_icon

SIRA10DP

New ProductSiRA14DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () Max.ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.00510 at VGS = 10 V Material categorization:2030 9.4 nCFor definitions of compliance please see0.00850 at VGS = 4.5 V 20www.vishay.com/doc?99912PowerPAK SO-8

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Keywords - SIRA10DP MOSFET datasheet

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