All MOSFET. 2SK1198 Datasheet

 

2SK1198 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1198
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO220F

 2SK1198 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1198 Datasheet (PDF)

 ..1. Size:313K  nec
 2sk1198.pdf

2SK1198 2SK1198

 8.1. Size:41K  1
 2sk1192.pdf

2SK1198 2SK1198

2SK1192External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 40 A I 250 A V = 60V, V = 0VD DSS DS GSI 160 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD

 8.2. Size:249K  hitachi
 2sk1199.pdf

2SK1198 2SK1198

 8.3. Size:18K  hitachi
 2sk1197.pdf

2SK1198 2SK1198

2SK1197Silicon N-Channel enhanced MOS FETApplicationHigh frequency amplifierFeatures High endurance capability against static electrical breakdown (C = 200pF) Between Gate from Source : 500 V Typ Between Drain from Source : 1000 V Min, 1500 V Typ Wide forward transfer admittance|yfs| = 150 mS Typ High breakdown voltage VDSS = 100V Small output capacitance

 8.4. Size:33K  no
 2sk1191.pdf

2SK1198

2SK1191External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 30 A I 250 A V = 60V, V = 0VD DSS DS GSI 120 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (p

 8.5. Size:33K  no
 2sk1190.pdf

2SK1198

2SK1190External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 250A, V = 0VDSS (BR) DSS D GSV 20 V I 500 nA V = 20VGSS GSS GSI 22 A I 250 A V = 60V, V = 0VD DSS DS GSI 88 (Tch 150C) A V 2.0 4.0 V V = 10V, I = 250AD (pu

 8.6. Size:200K  inchange semiconductor
 2sk1199.pdf

2SK1198 2SK1198

isc N-Channel MOSFET Transistor 2SK1199DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rel

 8.7. Size:250K  inchange semiconductor
 2sk1197.pdf

2SK1198 2SK1198

isc N-Channel MOSFET Transistor 2SK1197FEATURESDrain Current I = 0.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: 2SK1185 , 2SK1186 , 2SK1187 , 2SK1188 , 2SK1189 , 2SK1190 , 2SK1191 , 2SK1192 , SPP20N60C3 , 2SK1221 , 2SK1271 , 2SK1272 , 2SK1273 , 2SK1274 , 2SK1282 , 2SK1283 , 2SK1284 .

 

 
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