All MOSFET. APT1003RBLLG Datasheet

 

APT1003RBLLG Datasheet and Replacement


   Type Designator: APT1003RBLLG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-247
 

 APT1003RBLLG substitution

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APT1003RBLLG Datasheet (PDF)

 ..1. Size:99K  apt
 apt1003rbllg apt1003rsllg.pdf pdf_icon

APT1003RBLLG

APT1003RBLLAPT1003RSLL1000V 4A 3.00R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exc

 3.1. Size:99K  apt
 apt1003rbll.pdf pdf_icon

APT1003RBLLG

APT1003RBLLAPT1003RSLL1000V 4A 3.00R POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exc

 5.1. Size:100K  apt
 apt1003rbfllg apt1003rsfllg.pdf pdf_icon

APT1003RBLLG

APT1003RBFLLAPT1003RSFLL1000V 4A 3.00R POWER MOS 7 FREDFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

 6.1. Size:94K  apt
 apt1003rkfllg.pdf pdf_icon

APT1003RBLLG

APT1003RKFLL1000V 4A 3.00R POWER MOS 7 FREDFETTO-220Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesGDSalong with exceptionall

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Datasheet: APT1002R4BNR , APT1002RBNR , APT10030L2VFRG , APT10035B2FLLG , APT10035B2LLG , APT10035LFLLG , APT10035LLLG , APT1003RBFLLG , IRF640 , APT1003RKFLLG , APT1003RKLLG , APT1003RSFLLG , APT1003RSLLG , APT10040B2VFRG , APT10040LVFRG , APT10040LVR , APT10045B2FLLG .

History: FDD86581-F085 | HFB1N60F | 2SK2411 | BRCS2301EMF | AM2341P | ME70N10T-G | BLF6G22LS-130

Keywords - APT1003RBLLG MOSFET datasheet

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