APT1003RBLLG. Аналоги и основные параметры
Наименование производителя: APT1003RBLLG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 139 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 135 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT1003RBLLG
- подборⓘ MOSFET транзистора по параметрам
APT1003RBLLG даташит
apt1003rbllg apt1003rsllg.pdf
APT1003RBLL APT1003RSLL 1000V 4A 3.00 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exc
apt1003rbll.pdf
APT1003RBLL APT1003RSLL 1000V 4A 3.00 R POWER MOS 7 MOSFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exc
apt1003rbfllg apt1003rsfllg.pdf
APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET D3PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with
apt1003rkfllg.pdf
APT1003RKFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptionall
Другие IGBT... APT1002R4BNR, APT1002RBNR, APT10030L2VFRG, APT10035B2FLLG, APT10035B2LLG, APT10035LFLLG, APT10035LLLG, APT1003RBFLLG, IRFZ44, APT1003RKFLLG, APT1003RKLLG, APT1003RSFLLG, APT1003RSLLG, APT10040B2VFRG, APT10040LVFRG, APT10040LVR, APT10045B2FLLG
History: NVMFS5C460NL
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