APT1004RBNR Specs and Replacement
Type Designator: APT1004RBNR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO-247
APT1004RBNR substitution
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APT1004RBNR datasheet
apt1004rgn.pdf
D TO-257 G APT1004RGN 1000V 3.3A 4.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004RGN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 3.3 Amps IDM Pulsed Drain Current 1 13.2 VGS Gate-Source Voltage 30 Volts Total Po... See More ⇒
apt1004rcn.pdf
D TO-254 G APT1004RCN 1000V 3.6A 4.00 S TM POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT1004RCN UNIT VDSS Drain-Source Voltage 1000 Volts ID Continuous Drain Current @ TC = 25 C 3.6 Amps IDM Pulsed Drain Current 1 14.4 VGS Gate-Source Voltage 30 Volts Total Po... See More ⇒
apt1004r2bn.pdf
D TO-247 G APT1004RBN 1000V 4.4A 4.00 S APT1004R2BN 1000V 4.0A 4.20 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 1004RBN 1004R2BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25 C 4.4 4.0 Amps IDM Pulsed Drain Current 1... See More ⇒
Detailed specifications: APT1003RSLLG, APT10040B2VFRG, APT10040LVFRG, APT10040LVR, APT10045B2FLLG, APT10045B2LLG, APT10045LFLLG, APT10045LLLG, IRFB4115, APT10050B2VFRG, APT10050LVFRG, APT10078BFLLG, APT10078BLLG, APT10078SFLLG, APT10078SLLG, APT10090BFLLG, APT10090BLLG
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