APT10050B2VFRG Specs and Replacement
Type Designator: APT10050B2VFRG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 520 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 595 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-247
APT10050B2VFRG substitution
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APT10050B2VFRG datasheet
apt10050b2vfrg apt10050lvfrg.pdf
APT10050B2VFR APT10050LVFR 1000V 21A 0.500 B2VFR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR ... See More ⇒
apt10050b2vfr.pdf
APT10050B2VFR APT10050LVFR 1000V 21A 0.500W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifica... See More ⇒
apt10050b2vr.pdf
APT10050B2VR 1000V 21A 0.500 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L... See More ⇒
apt10050b2lc.pdf
APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fa... See More ⇒
Detailed specifications: APT10040B2VFRG, APT10040LVFRG, APT10040LVR, APT10045B2FLLG, APT10045B2LLG, APT10045LFLLG, APT10045LLLG, APT1004RBNR, 2N7000, APT10050LVFRG, APT10078BFLLG, APT10078BLLG, APT10078SFLLG, APT10078SLLG, APT10090BFLLG, APT10090BLLG, APT10090SFLLG
Keywords - APT10050B2VFRG MOSFET specs
APT10050B2VFRG cross reference
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APT10050B2VFRG substitution
APT10050B2VFRG replacement
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