Справочник MOSFET. APT10050B2VFRG

 

APT10050B2VFRG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT10050B2VFRG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1000 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 335 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 595 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO-247

 Аналог (замена) для APT10050B2VFRG

 

 

APT10050B2VFRG Datasheet (PDF)

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 apt10050b2vfrg apt10050lvfrg.pdf

APT10050B2VFRG APT10050B2VFRG

APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR

 1.1. Size:107K  apt
 apt10050b2vfr.pdf

APT10050B2VFRG APT10050B2VFRG

APT10050B2VFRAPT10050LVFR1000V 21A 0.500WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVR Identical Specifica

 3.1. Size:59K  apt
 apt10050b2vr.pdf

APT10050B2VFRG APT10050B2VFRG

APT10050B2VR1000V 21A 0.500POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 4.1. Size:68K  apt
 apt10050b2lc.pdf

APT10050B2VFRG APT10050B2VFRG

APT10050B2LCAPT10050LLC1000V 21A 0.500WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fa

 4.2. Size:67K  apt
 apt10050b2 lvfr c.pdf

APT10050B2VFRG APT10050B2VFRG

APT10050B2VFRAPT10050LVFR1000V 21A 0.500B2VFRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR

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