All MOSFET. APT10M19BVFRG Datasheet

 

APT10M19BVFRG MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT10M19BVFRG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-247

 APT10M19BVFRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10M19BVFRG Datasheet (PDF)

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 apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf

APT10M19BVFRG APT10M19BVFRG

APT10M19BVFRAPT10M19SVFR100V 75A 0.019BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SV

 2.1. Size:74K  apt
 apt10m19bvfr.pdf

APT10M19BVFRG APT10M19BVFRG

APT10M19BVFR100V 75A 0.019POWER MOS V FREDFETTO-247Power MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avala

 4.1. Size:67K  apt
 apt10m19bvr.pdf

APT10M19BVFRG APT10M19BVFRG

APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 4.2. Size:47K  apt
 apt10m19bvrg.pdf

APT10M19BVFRG APT10M19BVFRG

APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 4.3. Size:376K  inchange semiconductor
 apt10m19bvr.pdf

APT10M19BVFRG APT10M19BVFRG

isc N-Channel MOSFET Transistor APT10M19BVRFEATURESDrain Current I =75A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.019(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N4416DCSM | SVF13N50CFJ | SI2314EDS

 

 
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