APT10M19BVFRG. Аналоги и основные параметры

Наименование производителя: APT10M19BVFRG

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 370 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 1900 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm

Тип корпуса: TO-247

Аналог (замена) для APT10M19BVFRG

- подборⓘ MOSFET транзистора по параметрам

 

APT10M19BVFRG даташит

 ..1. Size:117K  apt
 apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf pdf_icon

APT10M19BVFRG

APT10M19BVFR APT10M19SVFR 100V 75A 0.019 BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SV

 2.1. Size:74K  apt
 apt10m19bvfr.pdf pdf_icon

APT10M19BVFRG

APT10M19BVFR 100V 75A 0.019 POWER MOS V FREDFET TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avala

 4.1. Size:67K  apt
 apt10m19bvr.pdf pdf_icon

APT10M19BVFRG

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 4.2. Size:47K  apt
 apt10m19bvrg.pdf pdf_icon

APT10M19BVFRG

APT10M19BVR 100V 75A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

ПОКАЗАТЬ ЕЩЁ

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