All MOSFET. APT1204R7BFLLG Datasheet

 

APT1204R7BFLLG MOSFET. Datasheet pdf. Equivalent

Type Designator: APT1204R7BFLLG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 135 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Rise Time (tr): 2 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 4.7 Ohm

Package: TO-247

APT1204R7BFLLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT1204R7BFLLG Datasheet (PDF)

1.1. apt1204r7kfllg.pdf Size:242K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT1204R7KFLL Ω 1200V 3.5A 4.700Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-220 Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses G D S along with exceptio

1.2. apt1204r7bfllg apt1204r7sfllg.pdf Size:245K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT1204R7BFLL APT1204R7SFLL Ω 1200V 3.5A 4.700Ω Ω Ω Ω R POWER MOS 7 FREDFET D3PAK Power MOS 7® is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along

 3.1. apt12040jll.pdf Size:69K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12040JLL 1000V 24A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

3.2. apt12040l2fllg.pdf Size:101K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12040L2FLL Ω 1200V 30A 0.400Ω Ω Ω Ω R POWER MOS 7 FREDFET TO-264 Power MOS 7® is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

 3.3. apt12045l2vfr.pdf Size:125K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12045L2VFR Ω 1200V 28A 0.450Ω Ω Ω Ω POWER MOS V® TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Avalan

3.4. apt12040jvfr.pdf Size:121K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12040JVFR Ω 1200V 26A 0.400Ω Ω Ω Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP® • Faste

 3.5. apt12040l2ll.pdf Size:64K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12040L2LL 1200V 30A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

3.6. apt12045l2vfrg.pdf Size:126K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12045L2VFR Ω 1200V 28A 0.450Ω Ω Ω Ω POWER MOS V® TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Avalan

3.7. apt12040jfll.pdf Size:108K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12040JFLL Ω 1200V 24A 0.400Ω Ω Ω Ω R POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses "UL Recognized" ISOTOP® along with e

3.8. apt12045l2vr.pdf Size:77K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12045L2VR 1200V 26A 0.450W POWER MOS V® TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • TO-264 MAX Package • 100% Avalanche Tested D

3.9. apt12040jvr.pdf Size:207K _apt

APT1204R7BFLLG
APT1204R7BFLLG

APT12040JVR 1200V 26A 0.400W POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche T

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