APT1204R7BFLLG. Аналоги и основные параметры
Наименование производителя: APT1204R7BFLLG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 135 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 130 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 4.7 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT1204R7BFLLG
- подборⓘ MOSFET транзистора по параметрам
APT1204R7BFLLG даташит
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APT1204R7BFLL APT1204R7SFLL 1200V 3.5A 4.700 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along
apt1204r7kfllg.pdf
APT1204R7KFLL 1200V 3.5A 4.700 R POWER MOS 7 FREDFET TO-220 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses G D S along with exceptio
apt12045l2vfrg.pdf
APT12045L2VFR 1200V 28A 0.450 POWER MOS V TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement Max mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching Avalan
apt12040l2fllg.pdf
APT12040L2FLL 1200V 30A 0.400 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally
Другие IGBT... APT1201R5BVFRG, APT1201R5SVFRG, APT1201R6BVFRG, APT1201R6SVFRG, APT12031JFLL, APT12040JFLL, APT12040L2FLLG, APT12045L2VFRG, IRFP250, APT1204R7KFLLG, APT1204R7SFLLG, APT12057B2FLLG, APT12057B2LLG, APT12057JFLL, APT12057LFLLG, APT12057LLLG, APT12060B2VFRG
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