RF1K49224 Datasheet and Replacement

RF1K49224Data Sheet August 1999 File Number 4330.13.5A/2.5A, 30V, 0.060/0.150 Ohms, FeaturesComplementary LittleFET Power 3.5A, 30V (N-Channel)MOSFET2.5A, 30V (P-Channel)The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel)manufactured using an advanced MegaFET process. ThisrDS(ON) = 0.150 (P-Channel)process, which uses feature sizes approa

RF1K49223Data Sheet January 20022.5A, 30V, 0.150 Ohm, Dual P-Channel FeaturesLittleFET Power MOSFET 2.5A, 30VThe RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

RF1K49221Data Sheet January 20022.5A, 60V, 0.130 Ohm, ESD Rated, Dual FeaturesN-Channel LittleFET Power MOSFET 2.5A, 60VThe RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130manufactured using an advanced MegaFET process. This 2kV ESD Protectedprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

RF1K49211Data Sheet January 20027A, 12V, 0.020 Ohm, Logic Level, Single FeaturesN-Channel LittleFET Power MOSFET 7A, 12VThe RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives