RF1K49224 - аналоги, параметры транзистора - Справочник транзисторов

RF1K49224 даташит

..1. Size:223K intersil
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RF1K49224 Data Sheet August 1999 File Number 4330.1 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Features Complementary LittleFET Power 3.5A, 30V (N-Channel) MOSFET 2.5A, 30V (P-Channel) The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel) manufactured using an advanced MegaFET process. This rDS(ON) = 0.150 (P-Channel) process, which uses feature sizes approa

6.1. Size:232K fairchild semi
rf1k49223.pdf pdf_icon

RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel Features LittleFET Power MOSFET 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

6.2. Size:261K fairchild semi
rf1k49221.pdf pdf_icon

RF1K49221 Data Sheet January 2002 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual Features N-Channel LittleFET Power MOSFET 2.5A, 60V The RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130 manufactured using an advanced MegaFET process. This 2kV ESD Protected process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

7.1. Size:258K fairchild semi
rf1k49211.pdf pdf_icon

RF1K49211 Data Sheet January 2002 7A, 12V, 0.020 Ohm, Logic Level, Single Features N-Channel LittleFET Power MOSFET 7A, 12V The RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives

Другие MOSFET... RF1K49092 , RF1K49093 , RF1K49154 , RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 , RF1K49223 , AO4407 , RF1S22N10SM , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM , RF1S45N06LESM .