APT20M11JFLL
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT20M11JFLL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 694
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 176
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 180
nC
trⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 4220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package:
SOT-227
APT20M11JFLL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT20M11JFLL
Datasheet (PDF)
..1. Size:167K apt
apt20m11jfll.pdf
APT20M11JFLL200V 176A 0.011R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switchin
5.1. Size:166K apt
apt20m11jll.pdf
APT20M11JLL200V 176A 0.011R POWER MOS 7 MOSFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses"UL Recognized"along with exceptionall
5.2. Size:74K apt
apt20m11jvfr.pdf
APT20M11JVFR200V 175A 0.011POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.ISOTOP Fast Recovery Body Diode 100% Avalanche
5.3. Size:74K apt
apt20m11jvr.pdf
APT20M11JVR200V 175A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche
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