APT20M11JFLL. Аналоги и основные параметры

Наименование производителя: APT20M11JFLL

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 694 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 176 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 65 ns

Cossⓘ - Выходная емкость: 4220 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm

Тип корпуса: SOT-227

Аналог (замена) для APT20M11JFLL

- подборⓘ MOSFET транзистора по параметрам

 

APT20M11JFLL даташит

 ..1. Size:167K  apt
 apt20m11jfll.pdf pdf_icon

APT20M11JFLL

APT20M11JFLL 200V 176A 0.011 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switchin

 5.1. Size:166K  apt
 apt20m11jll.pdf pdf_icon

APT20M11JFLL

APT20M11JLL 200V 176A 0.011 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptionall

 5.2. Size:74K  apt
 apt20m11jvfr.pdf pdf_icon

APT20M11JFLL

APT20M11JVFR 200V 175A 0.011 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ISOTOP Fast Recovery Body Diode 100% Avalanche

 5.3. Size:74K  apt
 apt20m11jvr.pdf pdf_icon

APT20M11JFLL

APT20M11JVR 200V 175A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

ПОКАЗАТЬ ЕЩЁ

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