All MOSFET. APT20M18B2VFRG Datasheet

 

APT20M18B2VFRG MOSFET. Datasheet pdf. Equivalent

Type Designator: APT20M18B2VFRG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 625 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 330 nC

Rise Time (tr): 27 nS

Drain-Source Capacitance (Cd): 2320 pF

Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm

Package: T-MAX

APT20M18B2VFRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT20M18B2VFRG Datasheet (PDF)

1.1. apt20m18b2vrg apt20m18lvrg.pdf Size:159K _update_mosfet

APT20M18B2VFRG
APT20M18B2VFRG

APT20M18B2VR A20M18LVR Ω 200V 100A 0.018Ω Ω Ω Ω B2VR POWER MOS V® MOSFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LV

1.2. apt20m18b2vfrg apt20m18lvfrg.pdf Size:152K _update_mosfet

APT20M18B2VFRG
APT20M18B2VFRG

APT20M18B2VFR A20M18LVFR Ω 200V 100A 0.018Ω Ω Ω Ω B2VFR POWER MOS V® FREDFET T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

 1.3. apt20m18b2vr.pdf Size:38K _apt

APT20M18B2VFRG
APT20M18B2VFRG

APT20M18B2VR APT20M18LVR 200V 100A 0.018W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificati

1.4. apt20m18b2vfr.pdf Size:39K _apt

APT20M18B2VFRG
APT20M18B2VFRG

APT20M18B2VFR APT20M18LVFR 200V 100A 0.018W B2VFR POWER MOS V® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVFR • Identical

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
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