APT21M100J Specs and Replacement

Type Designator: APT21M100J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 462 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT-227

APT21M100J substitution

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APT21M100J datasheet

 ..1. Size:102K  microsemi
 apt21m100j.pdf pdf_icon

APT21M100J

APT21M100J 1000V, 21A, 0.38 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ... See More ⇒

Detailed specifications: APT20M34BFLLG, APT20M34BLLG, APT20M34SFLLG, APT20M34SLLG, APT20M36BFLLG, APT20M36SFLLG, APT20M38SVFRG, APT20M40HVR, IRLB4132, APT22F100J, APT22F120B2, APT22F120L, APT22F80B, APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B

Keywords - APT21M100J MOSFET specs

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