All MOSFET. APT21M100J Datasheet

 

APT21M100J Datasheet and Replacement


   Type Designator: APT21M100J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 462 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT-227
 

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APT21M100J Datasheet (PDF)

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APT21M100J

APT21M100J 1000V, 21A, 0.38 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

Datasheet: APT20M34BFLLG , APT20M34BLLG , APT20M34SFLLG , APT20M34SLLG , APT20M36BFLLG , APT20M36SFLLG , APT20M38SVFRG , APT20M40HVR , 5N60 , APT22F100J , APT22F120B2 , APT22F120L , APT22F80B , APT22F80S , APT22M100JCU2 , APT22M100JCU3 , APT23F60B .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

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