APT30M40B2VFRG Specs and Replacement

Type Designator: APT30M40B2VFRG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO-247

APT30M40B2VFRG substitution

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APT30M40B2VFRG datasheet

 ..1. Size:116K  apt
 apt30m40b2vfrg.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VFR APT30M40LVFR 300V 76A 0.040 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout... See More ⇒

 3.1. Size:116K  apt
 apt30m40b2vr.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VR APT30M40LVR 300V 76A 0.040W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. LVR Faster Switching ... See More ⇒

 3.2. Size:88K  apt
 apt30m40b2vrg.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VR APT30M40LVR 300V 76A 0.040W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. LVR Faster Switching ... See More ⇒

 6.1. Size:70K  apt
 apt30m40jvr.pdf pdf_icon

APT30M40B2VFRG

APT30M40JVR 300V 70A 0.040 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalanc... See More ⇒

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Detailed specifications: APT30F60J, APT30M17JFLL, APT30M30B2FLLG, APT30M30B2LLG, APT30M30JFLL, APT30M30LFLL, APT30M30LLLG, APT30M36JFLL, IRFZ24N, APT30M40B2VRG, APT30M60J, APT30M61BFLLG, APT30M61SFLLG, APT30M75BFLLG, APT30M75BLLG, APT30M75SFLLG, APT30M75SLLG

Keywords - APT30M40B2VFRG MOSFET specs

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