All MOSFET. APT30M40B2VFRG Datasheet

 

APT30M40B2VFRG Datasheet and Replacement


   Type Designator: APT30M40B2VFRG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-247
 

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APT30M40B2VFRG Datasheet (PDF)

 ..1. Size:116K  apt
 apt30m40b2vfrg.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 3.1. Size:116K  apt
 apt30m40b2vr.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 3.2. Size:88K  apt
 apt30m40b2vrg.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 6.1. Size:70K  apt
 apt30m40jvr.pdf pdf_icon

APT30M40B2VFRG

APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc

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Datasheet: APT30F60J , APT30M17JFLL , APT30M30B2FLLG , APT30M30B2LLG , APT30M30JFLL , APT30M30LFLL , APT30M30LLLG , APT30M36JFLL , AON6380 , APT30M40B2VRG , APT30M60J , APT30M61BFLLG , APT30M61SFLLG , APT30M75BFLLG , APT30M75BLLG , APT30M75SFLLG , APT30M75SLLG .

History: IRF6217PBF | HY1506C2 | VBMB1303 | HGA045NE4SL | AP2302AGN | IXZR18N50A | 2SK1563

Keywords - APT30M40B2VFRG MOSFET datasheet

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