APT30M40B2VFRG - аналоги и даташиты транзистора

 

APT30M40B2VFRG - Даташиты. Аналоги. Основные параметры


   Наименование производителя: APT30M40B2VFRG
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 520 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 76 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 1500 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для APT30M40B2VFRG

   - подбор ⓘ MOSFET транзистора по параметрам

 

APT30M40B2VFRG Datasheet (PDF)

 ..1. Size:116K  apt
 apt30m40b2vfrg.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VFRAPT30M40LVFR300V 76A 0.040B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout

 3.1. Size:116K  apt
 apt30m40b2vr.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 3.2. Size:88K  apt
 apt30m40b2vrg.pdf pdf_icon

APT30M40B2VFRG

APT30M40B2VRAPT30M40LVR300V 76A 0.040WB2VRPOWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout..LVR Faster Switching

 6.1. Size:70K  apt
 apt30m40jvr.pdf pdf_icon

APT30M40B2VFRG

APT30M40JVR300V 70A 0.040POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalanc

ПОКАЗАТЬ ЕЩЁ

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History: 50N06F | IRFI740B | SSG4910N | SI2369DS | 10N60G-TQ2-R | 12N06Z | SSF65R099SFD

 

 
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