APT31N60BCSG Datasheet and Replacement
Type Designator: APT31N60BCSG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 65 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 3260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-247
APT31N60BCSG Datasheet (PDF)
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FINAL DATA SHEET 600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated Extreme dv/dt RatedG Popular TO-247 or Surface M
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APT31N80JC3800V 31A 0.145Super Junction MOSFETCOOLMOSPower Semiconductors Ultra low RDS(ON)"UL Recognized" Low Miller CapacitanceISOTOP Ultra Low Gate Charge, QgD Avalanche Energy RatedG N-Channel Enhancement Mode Popular SOT-227 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Paramete
apt31m100b2 apt31m100l.pdf

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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