APT31N60BCSG Datasheet and Replacement
Type Designator: APT31N60BCSG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 65 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 3260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-247
APT31N60BCSG Datasheet (PDF)
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FINAL DATA SHEET 600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated Extreme dv/dt RatedG Popular TO-247 or Surface M
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