FINAL DATA SHEET 600V 31A 0.100 APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated Extreme dv/dt RatedG Popular TO-247 or Surface M

APT31N80JC3800V 31A 0.145Super Junction MOSFETCOOLMOSPower Semiconductors Ultra low RDS(ON)"UL Recognized" Low Miller CapacitanceISOTOP Ultra Low Gate Charge, QgD Avalanche Energy RatedG N-Channel Enhancement Mode Popular SOT-227 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Paramete

APT31M100B2 APT31M100L 1000V, 32A, 0.38 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and