APT36N90BC3G Datasheet and Replacement
Type Designator: APT36N90BC3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 390 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 6827 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-247
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APT36N90BC3G Datasheet (PDF)
apt36n90bc3g.pdf

900V 36A APT36N90BC3G**G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET D3 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This de
apt36ga60b apt36ga60s.pdf

APT36GA60B APT36GA60S 600V High Speed PT IGBTAPT36GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov
apt36ga60bd15 apt36ga60sd15.pdf

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBTAPT36GA60SD15POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - APT36N90BC3G MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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