APT36N90BC3G MOSFET: N-Ch, 900V, 36A. Full datasheet with pinout, specifications and replacement transistor list

APT36N90BC3G Datasheet (PDF)

..1. Size:137K microsemi
apt36n90bc3g.pdf pdf_icon

900V 36A APT36N90BC3G**G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET D3 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This de

9.1. Size:208K microsemi
apt36ga60b apt36ga60s.pdf pdf_icon

APT36GA60B APT36GA60S 600V High Speed PT IGBTAPT36GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov

9.2. Size:237K microsemi
apt36ga60bd15 apt36ga60sd15.pdf pdf_icon

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBTAPT36GA60SD15POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

Datasheet: APT34F60BG , APT34F60S , APT34M60B , APT34M60S , APT34N80B2C3G , APT34N80LC3G , APT3565BN , APT3580BN , IRF540N , APT37F50B , APT37F50S , APT37M100B2 , APT37M100L , APT38F50J , APT38F80B2 , APT38F80L , APT38M50J .