APT36N90BC3G - аналоги и даташиты транзистора

 

APT36N90BC3G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: APT36N90BC3G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 390 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 6827 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для APT36N90BC3G

   - подбор ⓘ MOSFET транзистора по параметрам

 

APT36N90BC3G Datasheet (PDF)

 ..1. Size:137K  microsemi
 apt36n90bc3g.pdf pdf_icon

APT36N90BC3G

900V 36A APT36N90BC3G**G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET D3 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This de

 9.1. Size:208K  microsemi
 apt36ga60b apt36ga60s.pdf pdf_icon

APT36N90BC3G

APT36GA60B APT36GA60S 600V High Speed PT IGBTAPT36GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov

 9.2. Size:237K  microsemi
 apt36ga60bd15 apt36ga60sd15.pdf pdf_icon

APT36N90BC3G

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBTAPT36GA60SD15POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

Другие MOSFET... APT34F60BG , APT34F60S , APT34M60B , APT34M60S , APT34N80B2C3G , APT34N80LC3G , APT3565BN , APT3580BN , IRF540 , APT37F50B , APT37F50S , APT37M100B2 , APT37M100L , APT38F50J , APT38F80B2 , APT38F80L , APT38M50J .

 

 
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