APT36N90BC3G. Аналоги и основные параметры

Наименование производителя: APT36N90BC3G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 390 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 6827 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm

Тип корпуса: TO-247

Аналог (замена) для APT36N90BC3G

- подборⓘ MOSFET транзистора по параметрам

 

APT36N90BC3G даташит

 ..1. Size:137K  microsemi
 apt36n90bc3g.pdf pdf_icon

APT36N90BC3G

900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET D3 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel) G Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This de

 9.1. Size:208K  microsemi
 apt36ga60b apt36ga60s.pdf pdf_icon

APT36N90BC3G

APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov

 9.2. Size:237K  microsemi
 apt36ga60bd15 apt36ga60sd15.pdf pdf_icon

APT36N90BC3G

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

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