APT39M60J Datasheet and Replacement
Type Designator: APT39M60J
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 1040 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT-227
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APT39M60J Datasheet (PDF)
apt39m60j.pdf

APT39M60J 600V, 42A, 0.11 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga
apt39f60j.pdf

APT39F60J 600V, 42A, 0.11 Max trr 290nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP6942GMT-HF | HLML6401 | GC11N65F | STU2N80K5 | IRFS353 | NTR5103N | AP85T03GH-HF
Keywords - APT39M60J MOSFET datasheet
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History: AP6942GMT-HF | HLML6401 | GC11N65F | STU2N80K5 | IRFS353 | NTR5103N | AP85T03GH-HF



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