APT4014BVFRG Specs and Replacement

Type Designator: APT4014BVFRG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-247

APT4014BVFRG substitution

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APT4014BVFRG datasheet

 ..1. Size:72K  apt
apt4014bvfrg apt4014svfrg.pdf pdf_icon

APT4014BVFRG

APT4014BVFR APT4014SVFR 400V 28A 0.140 BVFR FREDFET POWER MOS V D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, SVFR increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.... See More ⇒

 3.1. Size:375K  inchange semiconductor
apt4014bvfr.pdf pdf_icon

APT4014BVFRG

isc N-Channel MOSFET Transistor APT4014BVFR FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 5.1. Size:64K  apt
apt4014bvr.pdf pdf_icon

APT4014BVFRG

APT4014BVR 400V 28A 0.140 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L... See More ⇒

 7.1. Size:64K  apt
apt4014hvr.pdf pdf_icon

APT4014BVFRG

APT4014HVR 400V 28A 0.140 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

Detailed specifications: APT38F80L, APT38M50J, APT38N60BC6, APT38N60SC6, APT39F60J, APT39M60J, APT4012BVFRG, APT4012SVFRG, AON6414A, APT4014SVFRG, APT4016BVFRG, APT4016SVFRG, APT4018BN, APT4020BVFRG, APT4065BN, APT4080BN, APT40M35JVFR

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