APT4014BVFRG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT4014BVFRG
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 560 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT4014BVFRG
APT4014BVFRG Datasheet (PDF)
apt4014bvfrg apt4014svfrg.pdf

APT4014BVFRAPT4014SVFR400V 28A 0.140BVFRFREDFETPOWER MOS VD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,SVFRincreases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt4014bvfr.pdf

isc N-Channel MOSFET Transistor APT4014BVFRFEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R =0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
apt4014bvr.pdf

APT4014BVR400V 28A 0.140POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt4014hvr.pdf

APT4014HVR400V 28A 0.140POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
Другие MOSFET... APT38F80L , APT38M50J , APT38N60BC6 , APT38N60SC6 , APT39F60J , APT39M60J , APT4012BVFRG , APT4012SVFRG , IRFB4110 , APT4014SVFRG , APT4016BVFRG , APT4016SVFRG , APT4018BN , APT4020BVFRG , APT4065BN , APT4080BN , APT40M35JVFR .
History: 2SK3813 | AOB12N65L | BUK765R3-40E | AM90N06-03B | SVGP159R3NL5ATR | NCEAP020N10LL | AP2330GN
History: 2SK3813 | AOB12N65L | BUK765R3-40E | AM90N06-03B | SVGP159R3NL5ATR | NCEAP020N10LL | AP2330GN



Список транзисторов
Обновления
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115